Integrated optical gyroscopes (IOGs) have been an efficient tool for numerous applications in various fields, including inertial navigation, flight control, and earthquake monitoring. Here, we review the progress of integrated optical gyroscopes based on two categories of integrated interferometric optical gyroscopes (IIOGs) and integrated resonant optical gyroscopes (IROGs).

Ion sensitive field effect transistor (ISFET) devices are highly accurate, convenient, fast and low-cost in the detection of ions and biological macromolecules, such as DNA molecules, antibodies, enzymatic substrates and cellular metabolites. For high-throughput cell metabolism detection, we successfully designed a very large-scale biomedical sensing application specific integrated circuit (ASIC) with a 640 × 640 ISFET array. The circuit design is highly integrated by compressing the size of a pixel to 7.4 × 7.4μm² and arranging the layout of even and odd columns in an interdigital pattern to maximize the utilization of space. The chip can operate at a speed of 2.083M pixels/s and the dynamic process of the fluid flow on the surface of the array was monitored through ion imaging. The pH sensitivity is 33 ± 4 mV/pH and the drift rate is 0.06 mV/min after 5 h, indicating the stability and robustness of the chip. Moreover, the chip was applied to monitor pH changes in CaSki cells metabolism, with pH shifting from 8.04 to 7.40 on average. This platform has the potential for continuous and parallel monitoring of cell metabolism in single-cell culture arrays.Ion sensitive field effect transistor (ISFET) devices are highly accurate, convenient, fast and low-cost in the detection of ions and biological macromolecules, such as DNA molecules, antibodies, enzymatic substrates and cellular metabolites. For high-throughput cell metabolism detection, we successfully designed a very large-scale biomedical sensing application specific integrated circuit (ASIC) with a 640 × 640 ISFET array. The circuit design is highly integrated by compressing the size of a pixel to 7.4 × 7.4μm² and arranging the layout of even and odd columns in an interdigital pattern to maximize the utilization of space. The chip can operate at a speed of 2.083M pixels/s and the dynamic process of the fluid flow on the surface of the array was monitored through ion imaging. The pH sensitivity is 33 ± 4 mV/pH and the drift rate is 0.06 mV/min after 5 h, indicating the stability and robustness of the chip. Moreover, the chip was applied to monitor pH changes in CaSki cells metabolism, with pH shifting from 8.04 to 7.40 on average. This platform has the potential for continuous and parallel monitoring of cell metabolism in single-cell culture arrays.

For external cavity semiconductor lasers (ECSLs), high coupling efficiency is critical to reducing the linewidth. In this paper, the coupling efficiency between the laser diode and the waveguide grating has been improved, with proposals for its improvement presented, including adding spot-size conversion (SSC) and using a silicon-on-insulator (SOI) waveguide. The results indicate an increase of coupling efficiency from 41.5% to 93.1%, which exhibits an improvement of approximately 51.6% over conventional schemes. The relationship between coupling efficiency and SOI waveguide structures is mainly concerned in this article. These findings provide a new way for the future research of the narrow linewidth of ECSL.

We demonstrate a low-cost hybrid integrated and compact 100 GBaud four-lane coarse wavelength division multiplexing (CWDM) receiver optical sub-assembly (ROSA) based on an arrayed waveguide grating de-multiplexer in the O band. To achieve the horizontal light coupling between the planar light-wave circuit (PLC) based arrayed waveguide grating de-multiplexer and photodetector array, a 42° polished facet is applied for total reflection. A flexible printed circuit with high-frequency coplanar waveguides is used for a power supply of trans-impedance amplifier and signal transmission. The fabricated CWDM ROSA module, whose size is 18mm×22mm×6mm, shows a 3 dB bandwidth of 21.2, 18.4, 19.6, and 19.3 GHz, respectively, in each lane. The overall symbol error rates are at a magnitude of 10 7 for 25 GBaud four-level pulse amplitude modulation (PAM-4) transmission with an average input optical power of 5 dBm.

We report a compact 2×2 Mach–Zehnder interferometer (MZI) electro-optic switch fabricated on a silicon-on-insulator using standard complementary metal-oxide semiconductor (CMOS) processes. With a short modulation arm length of 200 μm, the crosstalk is reduced to 22 dB by the new modulation scheme of push–pull modulation with a pre-biased π/2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.